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ti.\*:("Molecular Beam Epitaxy")

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Results 1 to 25 of 5351

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Molecular Beam EpitaxyKAO, Yung-Chung.Journal of crystal growth. 1997, Vol 175-76, issn 0022-0248, 655 p., 2Conference Proceedings

International Symposium on Silicon Molecular Beam EpitaxyBARIBEAU, J.-M.Thin solid films. 1998, Vol 321, Num 1-2, issn 0040-6090, 277 p.Conference Proceedings

Molecular Beam Epitaxy 2000. Proceedings of the Eleventh International Conference on Molecular Beam Epitaxy, Beijing, China, 11-15 September 2000KONG, Mei Ying; TU, Charles W.Journal of crystal growth. 2001, Vol 227-28, issn 0022-0248, 1224 p.Conference Proceedings

Molecular beam epitaxy of CdS/ZnSe heterostructuresPETILLON, S; DINGER, A; GRÜN, M et al.Journal of crystal growth. 1999, Vol 201202, pp 453-456, issn 0022-0248Conference Paper

Iodine-assisted molecular beam epitaxyMICOVIC, M; LUBYSHEV, D; CAI, W. Z et al.Journal of crystal growth. 1997, Vol 175-76, pp 428-434, issn 0022-0248, 1Conference Paper

Dopant evaporation sources for molecular beam epitaxyWALKER, J. F; MICOVIC, M; CARNERA, A et al.Journal of crystal growth. 1993, Vol 127, Num 1-4, pp 990-994, issn 0022-0248Conference Paper

Use of optical fiber pyrometry in molecular beam epitaxyEYINK, K. G; PATTERSON, J. K; ADAMS, S. J et al.Journal of crystal growth. 1997, Vol 175-76, pp 262-266, issn 0022-0248, 1Conference Paper

Molecular beam epitaxy of nitride thin filmsPAISLEY, M. J; DAVIS, R. F.Journal of crystal growth. 1993, Vol 127, Num 1-4, pp 136-142, issn 0022-0248Conference Paper

Nature of Growth Pits in Lead Salt Epilayers Grown by Molecular Beam EpitaxyJIANGANG MA; DONGHUI LI; GANG BI et al.Journal of electronic materials. 2009, Vol 38, Num 2, pp 325-329, issn 0361-5235, 5 p.Article

The 15th International Conference on Molecular Beam Epitaxy (MBE-XV)WASILEWSKI, Z. R; BERESFORD, R.Journal of crystal growth. 2009, Vol 311, Num 7, issn 0022-0248, 639 p.Conference Proceedings

Thermodynamic analysis on Molecular Beam Epitaxy of GaN, InN and AlNKOUKITU, A; SEKI, H.Japanese journal of applied physics. 1997, Vol 36, Num 6B, pp L750-L753, issn 0021-4922, 2Article

Growth Parameters for Thin Film InBi Grown by Molecular Beam EpitaxyKEEN, B; MAKIN, R; STAMPE, P. A et al.Journal of electronic materials. 2014, Vol 43, Num 4, pp 914-920, issn 0361-5235, 7 p.Conference Paper

Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam EpitaxyFERNÁNDEZ-GARRIDO, Sergio; KAGANER, Vladimir M; SABELFELD, Karl K et al.Nano letters (Print). 2013, Vol 13, Num 7, pp 3274-3280, issn 1530-6984, 7 p.Article

Study of Nonpolar GaN/ZnO Heterostructures Grown by Molecular Beam EpitaxyCHANG, Chiao-Yun; HUANG, Huei-Min; LAN, Yu-Pin et al.Crystal growth & design. 2013, Vol 13, Num 7, pp 3098-3102, issn 1528-7483, 5 p.Article

Effects of strain on the growth and properties of CuInSe2epitaxial filmsNIKI, S; FONS, P. J; SHIBATA, H et al.Journal of crystal growth. 1997, Vol 175-76, pp 1051-1056, issn 0022-0248, 2Conference Paper

Nanoscale Growth of GaAs on Patterned Si(111) Substrates by Molecular Beam EpitaxyCHU, Chia-Pu; ARAFIN, Shamsul; BENSALEH, Mohammed S et al.Crystal growth & design. 2014, Vol 14, Num 2, pp 593-598, issn 1528-7483, 6 p.Article

Oxygen Incorporation in ZnTeO Alloys via Molecular Beam EpitaxyLI QIN ZHOU; CHIHYU CHEN; HONGFEI JIA et al.Journal of electronic materials. 2014, Vol 43, Num 4, pp 889-893, issn 0361-5235, 5 p.Conference Paper

Graphitic Carbon Growth on MgO(100) by Molecular Beam EpitaxyJERNG, S. K; LEE, J. H; YU, D. S et al.Journal of physical chemistry. C. 2012, Vol 116, Num 13, pp 7380-7385, issn 1932-7447, 6 p.Article

ZnO Grown on (111) ZnS Substrates by Plasma-Assisted Molecular Beam EpitaxyKUAILE ZHAO; SHAOPING WANG; SHEN, A et al.Journal of electronic materials. 2012, Vol 41, Num 8, pp 2151-2154, issn 0361-5235, 4 p.Article

Ferromagnetic GaAs/GaMnAs Core-Shell Nanowires Grown by Molecular Beam EpitaxyRUDOLPH, Andreas; SODA, Marcello; KIESSLING, Matthias et al.Nano letters (Print). 2009, Vol 9, Num 11, pp 3860-3866, issn 1530-6984, 7 p.Article

Zn1-xmnxTe Diluted Magnetic Semiconductor Nanowires Grown by Molecular Beam EpitaxyZALESZCZYK, Wojciech; JANIK, Elzbieta; PETROUTCHIK, Aleksy et al.Nano letters (Print). 2008, Vol 8, Num 11, pp 4061-4065, issn 1530-6984, 5 p.Article

Increased size uniformity through vertical quantum dot columnsSOLOMON, G. S; KOMAROV, S; HARRIS, J. S et al.Journal of crystal growth. 1997, Vol 175-76, pp 707-712, issn 0022-0248, 2Conference Paper

New semiconductors TlInGaP and their gas source MBE growthASAHI, H; FUSHIDA, M; YAMAMOTO, K et al.Journal of crystal growth. 1997, Vol 175-76, pp 1195-1199, issn 0022-0248, 2Conference Paper

Molecular beam epitaxyARTHUR, John R.Surface science. 2002, Vol 500, Num 1-3, pp 189-217, issn 0039-6028Article

Molecular beam epitaxyJOYCE, B. A.Reports on Progress in Physics (Print). 1985, Vol 48, Num 12, pp 1637-1697, issn 0034-4885Article

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